77ghz汽车雷达发射机，65nm CMOS

2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2012-11-01 DOI:10.1109/RFIT.2012.6401650

H. T. Duong, H. V. Le, A. Huynh, B. Yang, F. Zhang, R. Evans, E. Skafidas

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引用次数: 2

摘要

介绍了一种用于车载雷达的77 GHz单边带发射机。直接转换发射机由一个SSB次谐波上变频混频器和一个4级功率放大器组成。38 GHz无源耦合器和平衡器设计用于从外部输入提供IQ差分LO来驱动混频器。该发射机采用65nm CMOS工艺制造。所测发射机在77 GHz时的1 db输出压缩点为-2 dBm，饱和输出功率为0 dBm。本端到射频输出的漏损小于-33 dBm，输出匹配在65 ~ 80 GHz范围内优于-18 dB。提出的发射机功耗为130 mW，硅模尺寸为1.0 × 2.7 mm2。

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A 77 GHz automotive radar transmitter in 65-nm CMOS

A single side band(SSB) 77 GHz transmitter for radar automotive applications is presented in this paper. The direct conversion transmitter consists of a SSB sub-harmonic up-convertion mixer and a 4-stage power amplifier(PA). The 38 GHz passive coupler and balun are designed to provide IQ differential LO from external input to drive the mixer. The proposed transmitter is fabricated in 65-nm CMOS. The measured transmitter has 1-dB output compression point of -2 dBm and a saturation output power of 0 dBm at 77 GHz. The leakage from LO to RF output is less than -33 dBm and the output matching is better than -18 dB from 65 to 80 GHz. The proposed transmitter power consumption is 130 mW and the silicon die-size is 1.0 × 2.7 mm2.

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来源期刊

2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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