基于唯一指标参数的全隔离Nch-LDMOS负输入电压HBM鲁棒性优化

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Pub Date : 2017-05-01 DOI:10.23919/ISPSD.2017.7988881

Fumio Takeuchi, Hirofumi Nagano, Toshihiro Sakamoto, K. Kimura, F. Matsuoka

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引用次数: 4

摘要

为了克服完全隔离nh - ldmos中击穿电压对负偏置和HBM鲁棒性之间的权衡，我们发现并利用了一个新的唯一参数来估计HBM鲁棒性，该参数主要关注TLP脉冲施加时漏极区下的电场。利用这一独特的指标参数，我们成功地实现了优化后的Nch-LDMOS具有35.9 V的高击穿电压和4700 V的高HBM鲁棒性。

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HBM robustness optimization of fully isolated Nch-LDMOS for negative input voltage using unique index parameter

To overcome the trade-off between breakdown voltage to negative bias and HBM robustness in fully isolated Nch-LDMOS, we found and utilized a new unique parameter for HBM robustness estimation, which focused on the electric field under the drain region when TLP pulse was applied. By using this unique index parameter, we successfully achieved the optimized Nch-LDMOS with keeping high breakdown voltage of 35.9 V to negative bias as well as high HBM robustness of 4700 V.

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来源期刊

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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