用于逆变器的碳化硅功率模块的电气设计与建模

2022 IEEE 72nd Electronic Components and Technology Conference (ECTC) Pub Date : 2022-05-01 DOI:10.1109/ectc51906.2022.00320

V. S. Bhaskar, Jong Ming Chinq, Kazunori Yamamoto, G. Tang

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引用次数: 0

摘要

本文讨论了用于逆变器的碳化硅功率模块的电气设计和建模。提出了一种6-in- 1碳化硅MOSFET功率模块，并对其封装进行了描述和分析。利用Ansys Q3D仿真软件进行了电气设计和建模，提取了寄生电感和寄生电容。计算得到功率回路电感为6.21 nH，门回路电感为1.94 nH，寄生电容为29.98 pF。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electrical Design and Modeling of Silicon Carbide Power Modules for Inverter Applications

In this paper, electrical design and modeling of silicon carbide power modules for inverter applications are discussed. A 6-in-l silicon carbide MOSFET power module is proposed, and its package is described and analyzed. The electrical design and modeling are done using Ansys Q3D simulation to extract the parasitic inductances and capacitances. The computed power loop inductance is 6.21 nH, gate loop inductance is 1.94 nH, while the parasitic capacitance is 29.98 pF.

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2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)

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