{"title":"无线应用硅基Ca5Nb2TiO12矩形介电谐振器天线","authors":"A. Freundorfer, M. Sayer, P. Bijumon, Y. Antar","doi":"10.1109/ISSCS.2013.6651235","DOIUrl":null,"url":null,"abstract":"A new on-chip Ca5Nb2TiO12 dielectric resonator antenna for 60 GHz radio wireless systems was designed. The proposed rectangular integrated dielectric resonator antenna on conductive silicon (resistivity = 10Ω-cm) 3.2 dB simulated gain with 54% simulated radiation efficiency. With this antennae configuration it was shown that very little Si space was lost. Two amplifiers were beneath the ground plane of the antenna which had little effect on the measured performance of the antenna.","PeriodicalId":260263,"journal":{"name":"International Symposium on Signals, Circuits and Systems ISSCS2013","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Ca5Nb2TiO12 rectangular dielectric resonator antenna on silicon for wireless applications\",\"authors\":\"A. Freundorfer, M. Sayer, P. Bijumon, Y. Antar\",\"doi\":\"10.1109/ISSCS.2013.6651235\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new on-chip Ca5Nb2TiO12 dielectric resonator antenna for 60 GHz radio wireless systems was designed. The proposed rectangular integrated dielectric resonator antenna on conductive silicon (resistivity = 10Ω-cm) 3.2 dB simulated gain with 54% simulated radiation efficiency. With this antennae configuration it was shown that very little Si space was lost. Two amplifiers were beneath the ground plane of the antenna which had little effect on the measured performance of the antenna.\",\"PeriodicalId\":260263,\"journal\":{\"name\":\"International Symposium on Signals, Circuits and Systems ISSCS2013\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Symposium on Signals, Circuits and Systems ISSCS2013\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCS.2013.6651235\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Symposium on Signals, Circuits and Systems ISSCS2013","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCS.2013.6651235","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ca5Nb2TiO12 rectangular dielectric resonator antenna on silicon for wireless applications
A new on-chip Ca5Nb2TiO12 dielectric resonator antenna for 60 GHz radio wireless systems was designed. The proposed rectangular integrated dielectric resonator antenna on conductive silicon (resistivity = 10Ω-cm) 3.2 dB simulated gain with 54% simulated radiation efficiency. With this antennae configuration it was shown that very little Si space was lost. Two amplifiers were beneath the ground plane of the antenna which had little effect on the measured performance of the antenna.
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