J.J. Harris, J. M. Roberts, R. Jaszek, M. Hopkinson
{"title":"用于功率场效应管的应变平衡量子阱","authors":"J.J. Harris, J. M. Roberts, R. Jaszek, M. Hopkinson","doi":"10.1109/EDMO.1995.493687","DOIUrl":null,"url":null,"abstract":"We report the use of strain-balanced quantum well structures to generate high carrier density, high mobility layers suitable for power FET applications. Current designs of modulation-doped heterojunctions (i.e. HEMTs) have a sheet carrier density limited to a maximum of /spl sim/3/spl times/10/sup 12/ cm/sup -2/, while doped channel devices (HFETs) allow higher densities, but with degraded mobility. We have investigated two techniques for giving improved properties, (a) strain-balanced AlAs/InAs/AlAs HEMTs grown on InP, where sheet densities of /spl sim/10/sup 13/ cm/sup -2/ have been generated, although with some evidence of mobility degradation, and (b) delta-doped, compositionally graded HFETs, again strain-balanced on InP, where excellent mobilities and saturation drift velocities have been obtained for sheet densities of 4-5/spl times/10/sup 12/ cm/sup -2/. This paper describes the growth techniques used to produce these samples, and presents the X-ray diffraction data and electrical properties of the layers.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Strain-balanced quantum wells for power FET applications\",\"authors\":\"J.J. Harris, J. M. Roberts, R. Jaszek, M. Hopkinson\",\"doi\":\"10.1109/EDMO.1995.493687\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the use of strain-balanced quantum well structures to generate high carrier density, high mobility layers suitable for power FET applications. Current designs of modulation-doped heterojunctions (i.e. HEMTs) have a sheet carrier density limited to a maximum of /spl sim/3/spl times/10/sup 12/ cm/sup -2/, while doped channel devices (HFETs) allow higher densities, but with degraded mobility. We have investigated two techniques for giving improved properties, (a) strain-balanced AlAs/InAs/AlAs HEMTs grown on InP, where sheet densities of /spl sim/10/sup 13/ cm/sup -2/ have been generated, although with some evidence of mobility degradation, and (b) delta-doped, compositionally graded HFETs, again strain-balanced on InP, where excellent mobilities and saturation drift velocities have been obtained for sheet densities of 4-5/spl times/10/sup 12/ cm/sup -2/. This paper describes the growth techniques used to produce these samples, and presents the X-ray diffraction data and electrical properties of the layers.\",\"PeriodicalId\":431745,\"journal\":{\"name\":\"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-11-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDMO.1995.493687\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDMO.1995.493687","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Strain-balanced quantum wells for power FET applications
We report the use of strain-balanced quantum well structures to generate high carrier density, high mobility layers suitable for power FET applications. Current designs of modulation-doped heterojunctions (i.e. HEMTs) have a sheet carrier density limited to a maximum of /spl sim/3/spl times/10/sup 12/ cm/sup -2/, while doped channel devices (HFETs) allow higher densities, but with degraded mobility. We have investigated two techniques for giving improved properties, (a) strain-balanced AlAs/InAs/AlAs HEMTs grown on InP, where sheet densities of /spl sim/10/sup 13/ cm/sup -2/ have been generated, although with some evidence of mobility degradation, and (b) delta-doped, compositionally graded HFETs, again strain-balanced on InP, where excellent mobilities and saturation drift velocities have been obtained for sheet densities of 4-5/spl times/10/sup 12/ cm/sup -2/. This paper describes the growth techniques used to produce these samples, and presents the X-ray diffraction data and electrical properties of the layers.
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