用反应蚀刻系统中产生的氩等离子体在InGaAs/InGaAsP激光结构上进行量子阱混合

Proceedings of 2002 IEEE/LEOS Workshop on Fibre and Optical Passive Components (Cat.No.02EX595) Pub Date : 2002-08-07 DOI:10.1109/FOPC.2002.1015818

D. Leong, H. Djie, L. Ang

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引用次数: 3

摘要

利用反应离子蚀刻系统产生的氩等离子体在InGaAs/InGaAsP量子阱激光结构上进行了量子阱混合实验。采用田口法对工艺参数进行了优化。在氩气流量为50 sccm，压力为30 mTorr，射频功率为480 W的条件下，等离子体照射5分钟后获得73 nm的蓝移。

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Quantum well intermixing using argon plasma generated in a reactive-ion etching system on InGaAs/InGaAsP laser structures

Quantum-well intermixing using an argon plasma, generated by a reactive-ion etching system, is demonstrated on InGaAs/InGaAsP quantum well laser structures. The parameters of the process were optimised by using Taguchi's method. Using an argon flowrate of 50 sccm, pressure of 30 mTorr and RF power of 480 W, a blue shift of 73 nm was obtained after exposure to the plasma for 5 minutes.

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Proceedings of 2002 IEEE/LEOS Workshop on Fibre and Optical Passive Components (Cat.No.02EX595)

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