{"title":"x波段-GaAs FET yig调谐振荡器","authors":"T. Ruttan","doi":"10.1109/MWSYM.1977.1124429","DOIUrl":null,"url":null,"abstract":"The results of an X-band GaAs FET YIG-tuned osciIIator development are reported. The best performance achieved was a minimum output power of 35 mW over the frequency range of 8.0 to 12.4 GHz with oscillations from 7.15 to 13.8 GHz.","PeriodicalId":299607,"journal":{"name":"1977 IEEE MTT-S International Microwave Symposium Digest","volume":"99 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1977-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"X-Band--GaAs FET YIG-tuned Oscillator\",\"authors\":\"T. Ruttan\",\"doi\":\"10.1109/MWSYM.1977.1124429\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The results of an X-band GaAs FET YIG-tuned osciIIator development are reported. The best performance achieved was a minimum output power of 35 mW over the frequency range of 8.0 to 12.4 GHz with oscillations from 7.15 to 13.8 GHz.\",\"PeriodicalId\":299607,\"journal\":{\"name\":\"1977 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"99 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1977-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1977.1124429\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1977.1124429","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The results of an X-band GaAs FET YIG-tuned osciIIator development are reported. The best performance achieved was a minimum output power of 35 mW over the frequency range of 8.0 to 12.4 GHz with oscillations from 7.15 to 13.8 GHz.
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