12w单片x波段HBT功率放大器

IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1992-06-01 DOI:10.1109/MCS.1992.185994

M. Khatibzadeh, B. Bayraktaroglu, T. Kim

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引用次数: 31

摘要

采用AlGaAs/GaAs异质结双极晶体管(hbt)设计并制作了单片两级x波段功率放大器。通过尺寸为3.8 mm*4.7 mm的单芯片HBT放大器，在9.2 GHz下演示了高达12.5 W连续波(CW)的输出功率水平。采用优化后的300 μ m共发射极单元电池制作了两种放大器设计。这项工作的器件和电路设计方面与功率放大器性能的测量数据一起提出。在x波段频率的高连续波输出功率水平突出了HBT技术在微波固态功率应用中的优势。

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12 W monolithic X-band HBT power amplifier

Monolithic, two-stage X-band power amplifiers were designed and fabricated using AlGaAs/GaAs heterojunction bipolar transistors (HBTs). Output power levels of up to 12.5 W continuous wave (CW) were demonstrated at 9.2 GHz from single-chip HBT amplifiers measuring 3.8 mm*4.7 mm in size. Two amplifier designs were fabricated using optimized 300- mu m common-emitter unit cells. Device and circuit design aspects of this work are presented along with measured data on the performance of the power amplifiers. The high CW output power level at X-band frequencies highlights the advantages of HBT technology for microwave solid-state power applications.<>

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来源期刊

IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

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