O. Hashimoto, Y. Takahashi, H. Kirihata, M. Watanabe, O. Yamada
{"title":"4.5 kV 3000a大功率反导栅关断晶闸管","authors":"O. Hashimoto, Y. Takahashi, H. Kirihata, M. Watanabe, O. Yamada","doi":"10.1109/PESC.1988.18225","DOIUrl":null,"url":null,"abstract":"A 4.5 kV 3000 A high-power reverse conducting gate-turn-off (GTO) thyristor has been developed. The key aspects of the design are electrical separation between the GTO and the diode, the use of a p-i-n junction structure, and optimization of the anode shorting and the n/sup +/ buffer concentration. The electrical characteristics of the device, which achieves 4.5 kV blocking voltage, 3000 A turn-off current and low switching loss are reported.<<ETX>>","PeriodicalId":283605,"journal":{"name":"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"4.5 kV 3000 A high power reverse conducting gate turn-off thyristor\",\"authors\":\"O. Hashimoto, Y. Takahashi, H. Kirihata, M. Watanabe, O. Yamada\",\"doi\":\"10.1109/PESC.1988.18225\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 4.5 kV 3000 A high-power reverse conducting gate-turn-off (GTO) thyristor has been developed. The key aspects of the design are electrical separation between the GTO and the diode, the use of a p-i-n junction structure, and optimization of the anode shorting and the n/sup +/ buffer concentration. The electrical characteristics of the device, which achieves 4.5 kV blocking voltage, 3000 A turn-off current and low switching loss are reported.<<ETX>>\",\"PeriodicalId\":283605,\"journal\":{\"name\":\"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1988.18225\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1988.18225","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
4.5 kV 3000 A high power reverse conducting gate turn-off thyristor
A 4.5 kV 3000 A high-power reverse conducting gate-turn-off (GTO) thyristor has been developed. The key aspects of the design are electrical separation between the GTO and the diode, the use of a p-i-n junction structure, and optimization of the anode shorting and the n/sup +/ buffer concentration. The electrical characteristics of the device, which achieves 4.5 kV blocking voltage, 3000 A turn-off current and low switching loss are reported.<>