{"title":"具有大光腔和倾斜埋面的高增益、不依赖偏振的半导体光放大器","authors":"S. Tsuji, T. Toyonaka, M. Haneda, Y. Ono","doi":"10.1364/oaa.1990.pdp5","DOIUrl":null,"url":null,"abstract":"A polarization-insensitive semiconductor optical amplifier with angled buried facets has been fabricated. The TE and TM gains are equal to within 1.2-dB even including the additional effect from the gain ripple at 28-dB gain.","PeriodicalId":308628,"journal":{"name":"Optical Amplifiers and Their Applications","volume":"89 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High-gain, polarization-independent semiconductor optical amplifier with a large optical cavity and angled buried facets\",\"authors\":\"S. Tsuji, T. Toyonaka, M. Haneda, Y. Ono\",\"doi\":\"10.1364/oaa.1990.pdp5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A polarization-insensitive semiconductor optical amplifier with angled buried facets has been fabricated. The TE and TM gains are equal to within 1.2-dB even including the additional effect from the gain ripple at 28-dB gain.\",\"PeriodicalId\":308628,\"journal\":{\"name\":\"Optical Amplifiers and Their Applications\",\"volume\":\"89 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical Amplifiers and Their Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/oaa.1990.pdp5\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Amplifiers and Their Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/oaa.1990.pdp5","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-gain, polarization-independent semiconductor optical amplifier with a large optical cavity and angled buried facets
A polarization-insensitive semiconductor optical amplifier with angled buried facets has been fabricated. The TE and TM gains are equal to within 1.2-dB even including the additional effect from the gain ripple at 28-dB gain.
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