{"title":"一种高速薄膜存储器的设计与研制","authors":"Q. Simkins","doi":"10.1145/1464013.1464030","DOIUrl":null,"url":null,"abstract":"Memories in today's high-performance systems are typically made up of memory modules of capacity comparable to the new memory to be described here. Cycle times are 500 nsec to 1 μsec with access times of 300 to 500 nsec. This paper presents the design of a thin-film main memory with a capacity of 8,192 words of 72 bits each. The cycle time of this memory is 120 nsec with an access time of 60 nsec. Thus, this memory design represents a 4-to-8-times improvement in main memory performance over the present state of the art.","PeriodicalId":219254,"journal":{"name":"AFIPS '65 (Fall, part II)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1965-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A high-speed thin-film memory: its design and development\",\"authors\":\"Q. Simkins\",\"doi\":\"10.1145/1464013.1464030\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Memories in today's high-performance systems are typically made up of memory modules of capacity comparable to the new memory to be described here. Cycle times are 500 nsec to 1 μsec with access times of 300 to 500 nsec. This paper presents the design of a thin-film main memory with a capacity of 8,192 words of 72 bits each. The cycle time of this memory is 120 nsec with an access time of 60 nsec. Thus, this memory design represents a 4-to-8-times improvement in main memory performance over the present state of the art.\",\"PeriodicalId\":219254,\"journal\":{\"name\":\"AFIPS '65 (Fall, part II)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1965-11-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"AFIPS '65 (Fall, part II)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/1464013.1464030\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"AFIPS '65 (Fall, part II)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1464013.1464030","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A high-speed thin-film memory: its design and development
Memories in today's high-performance systems are typically made up of memory modules of capacity comparable to the new memory to be described here. Cycle times are 500 nsec to 1 μsec with access times of 300 to 500 nsec. This paper presents the design of a thin-film main memory with a capacity of 8,192 words of 72 bits each. The cycle time of this memory is 120 nsec with an access time of 60 nsec. Thus, this memory design represents a 4-to-8-times improvement in main memory performance over the present state of the art.
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