填充显微镜(FUM):一种近似地表亚表面损伤深度的非破坏性方法

C. Trum, C. Vogt, Sebastian Sitzberger, O. Faehnle, R. Rascher
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引用次数: 1

摘要

亚表面损伤(ssd)会对光学透镜和其他部件造成各种各样的缺陷。除了影响涂层的附着力和质量外,还会影响产品的机械稳定性、传输质量和激光损伤阈值(LIDT)。因此,它试图在生产链的末端获得尽可能无ssd的组件。在各个生产步骤中,了解ssd的深度非常重要,以便在接下来的制造步骤中删除它们。为了有效地设计制造工艺并避免损坏,能够尽可能精确地测量ssd的深度和特性非常重要。文献中已知有几种方法和方法来确定ssd。然而,其中许多不可避免地导致工件的破坏。虽然其他的是非破坏性的,但在设计上非常复杂和/或与大量投资有关。同样,只有少数适合于确定地面粗糙表面上的ssd。填充显微镜(FUM)是一种接近ssd深度的替代方法,即使在粗糙的表面上也不会破坏它们。乍一看,该方法详细描述了程序,并显示了制备样品的所有必要步骤。与已知的球窝法的第一次比较证实了这个概念的功能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Filled-Up-Microscopy (FUM): a non-destructive method for approximating the depth of sub-surface damage on ground surfaces
Subsurface Damages (SSDs) can cause a wide variety of defects to optical lenses and other components. In addition to the adhesion and quality of coatings, the mechanical stability, the transmission quality and the laser-induced damage threshold (LIDT) of the products, is also affected. It is, therefore, attempted to get components as SSD-free as possible at the end of the production chain. Already during the individual production steps, it is important to know the depth of the SSDs in order to remove them in the following manufacturing steps. To design the manufacturing processes efficiently and avoid damage, it is important to be able to measure the depth and characteristics of SSDs as precisely as possible. There are a several approaches and methods to determine SSDs known in literature. However, many of them inevitably lead to the destruction of the workpiece. Although others are non-destructive, but very complex in design and/or associated with large investments. Likewise, only a few are suitable for determining SSDs on ground rough surfaces. Filled-Up Miicroscopy (FUM) is an alternative approach to approximating the depth of SSDs, even on rough surfaces without destroying them. At a first glance at the method, the procedure is described in detail and all necessary steps of preparing the samples are shown. A first comparison with the known Ball Dimpling Method confirms the functionality of the concept.
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