自辅助砷化镓纳米线的平顶形成

2015 1st Workshop on Nanotechnology in Instrumentation and Measurement (NANOFIM) Pub Date : 2015-07-01 DOI:10.1109/NANOFIM.2015.8425276

C. Somaschini, A. Fedorov, S. Bietti, D. Scarpellini, S. Sanguinetti

{"title":"自辅助砷化镓纳米线的平顶形成","authors":"C. Somaschini, A. Fedorov, S. Bietti, D. Scarpellini, S. Sanguinetti","doi":"10.1109/NANOFIM.2015.8425276","DOIUrl":null,"url":null,"abstract":"We identified the growth conditions which lead to the formation of a flat top facet in GaAs nanowires, grown by the self-assisted method in molecular beam epitaxy. Low arsenic overpressure, intermediate temperature and relatively long annealing time are needed to transform the Ga droplets present at the top of the nanowires into a flat GaAs segment. This result opens the possibility to realize atomically sharp heterointerfaces in this type of semiconductor nanowires.","PeriodicalId":413629,"journal":{"name":"2015 1st Workshop on Nanotechnology in Instrumentation and Measurement (NANOFIM)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Flat top formation in self-assisted GaAs nanowires\",\"authors\":\"C. Somaschini, A. Fedorov, S. Bietti, D. Scarpellini, S. Sanguinetti\",\"doi\":\"10.1109/NANOFIM.2015.8425276\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We identified the growth conditions which lead to the formation of a flat top facet in GaAs nanowires, grown by the self-assisted method in molecular beam epitaxy. Low arsenic overpressure, intermediate temperature and relatively long annealing time are needed to transform the Ga droplets present at the top of the nanowires into a flat GaAs segment. This result opens the possibility to realize atomically sharp heterointerfaces in this type of semiconductor nanowires.\",\"PeriodicalId\":413629,\"journal\":{\"name\":\"2015 1st Workshop on Nanotechnology in Instrumentation and Measurement (NANOFIM)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 1st Workshop on Nanotechnology in Instrumentation and Measurement (NANOFIM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANOFIM.2015.8425276\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 1st Workshop on Nanotechnology in Instrumentation and Measurement (NANOFIM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANOFIM.2015.8425276","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们确定了在分子束外延中采用自辅助方法生长的GaAs纳米线中导致平顶面形成的生长条件。在较低的砷超压、中等的温度和较长的退火时间下，纳米线顶部的Ga液滴才能转化为平坦的GaAs段。这一结果开启了在这类半导体纳米线中实现原子尖锐异质界面的可能性。

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Flat top formation in self-assisted GaAs nanowires

We identified the growth conditions which lead to the formation of a flat top facet in GaAs nanowires, grown by the self-assisted method in molecular beam epitaxy. Low arsenic overpressure, intermediate temperature and relatively long annealing time are needed to transform the Ga droplets present at the top of the nanowires into a flat GaAs segment. This result opens the possibility to realize atomically sharp heterointerfaces in this type of semiconductor nanowires.

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2015 1st Workshop on Nanotechnology in Instrumentation and Measurement (NANOFIM)

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