一种缓解28nm FDSOI晶体管TID效应的混合方法

2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2020-10-01 DOI:10.1109/RADECS50773.2020.9857702

A. Acuña, J. Armani, M. Slimani, M. Cassé, P. Dollfus

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引用次数: 1

摘要

在这项工作中，我们提出了一种混合方法来减轻总电离剂量(TID)对28 nm完全耗尽绝缘体上硅(FDSOI) mosfet在两种不同剂量率下暴露于$60_{Co}$ γ辐射的影响。除了FDSOI技术固有的阈值电压调制之外，这种新的热电方法还通过快速退火循环使用热再生。应用这种方法可以提高晶体管在辐射环境中执行任务时的可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Mixed Method to Mitigate the TID Effects on 28nm FDSOI Transistors

In this work we propose a mixed method to mitigate the effects of Total Ionizing Dose (TID) on 28 nm Fully-Depleted Silicon-On-Insulator (FDSOI) MOSFETs exposed to $60_{Co}$ gamma radiation at two different dose rates. This new thermal-electrical method uses thermal regeneration by applying rapid annealing cycles in addition to threshold voltage modulation inherent in FDSOI technology. Applying this methodology could enhance the transistor reliability during a mission in radiative environments.

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来源期刊

2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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