辐照MOSFET器件高频氧化阱提取新方法

Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442) Pub Date : 1900-01-01 DOI:10.1109/ICM.2003.237971

B. Djezzar, S. Oussalah, A. Smatti

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引用次数: 2

摘要

本文提出了一种新的辐射诱导氧化阱密度(/spl Delta/N/sub - ot/)提取方法，称为OTCP(基于电荷泵浦的氧化阱)。在这种方法中，我们使用高频(HF)标准CP测量。我们在CP电流(I/sub CP /)测量中避免了边界陷阱效应。因此，I/sub cp/只是由于接口trap的贡献。我们证明了/spl Delta/N/sub - ot/仅依赖于/spl Delta/V/sub - th/(阈值电压位移)和/spl Delta/I/sub - cpm/(最大CP电流的增加)。从CP - Elliot曲线的横向位移可以得到/spl Delta/V/sub - th/，从垂直位移可以得到/spl Delta/I/sub - cpm/。

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New oxide-trap extraction method for irradiated MOSFET devices at high frequencies

This paper proposes a new extraction method of radiation-induced oxide-trap density (/spl Delta/N/sub ot/), called OTCP (Oxide-Trap based on Charge-Pumping). In this method, we use a High Frequency (HF) standard CP measurement. We avoid the border-trap effect in CP current (I/sub cp/) measurements. Hence, I/sub cp/ is only due to the interface-trap contribution. We demonstrate that /spl Delta/N/sub ot/ is only dependent on /spl Delta/V/sub th/ (threshold voltage shift) and /spl Delta/I/sub cpm/ (augmentation of maximum CP current). We also show that /spl Delta/V/sub th/ can be obtained from lateral shift of CP Elliot curves and /spl Delta/I/sub cpm/ from vertical shift.

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Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442)

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