探索用于高度可扩展并行系统的多核存储器/逻辑芯片的技术空间

P. Kogge
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引用次数: 18

摘要

芯片级多处理,其中多个CPU“核心”与内存层次结构的重要部分共享相同的die,作为标准设计实践出现的频率越来越高。本文将通过最新的CMOS路线图预测,并根据关键芯片级系统级构建模块,对这种混合逻辑/内存芯片在未来的发展进行更广泛的研究。鉴于存储密度在此类系统中的重要性日益增加,特别是当我们转向单芯片类型设计时,我们特别注意在许多存储结构中使用前沿DRAM而不是SRAM的潜在用途。其他因素的作用,如互连和电源,也被考虑。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An exploration of the technology space for multi-core memory/logic chips for highly scalable parallel systems
Chip-level multi-processing, where more than one CPU "core" share the same die with significant parts of the memory hierarchy, is appearing with increasing frequency as standard design practice. This paper takes a broader look at how such mixed logic/memory dies may evolve in the future by walking through the latest CMOS roadmap projections, and casting them in terms of the key chip-level system level building blocks. Given the increasing importance of memory density in such systems, especially as we move to single chip-type designs, we pay particular attention to the potential use of not SRAM but leading edge DRAM for many memory structures. The roles of other factors, such as interconnect and power, is also considered.
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