低温下物理量传感器接口的JFET (Si,SiC, GaAs)补偿稳压器

2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2020-10-15 DOI:10.1109/EExPolytech50912.2020.9243975

N. Prokopenko, A. Zhuk, I. Pakhomov, O. Dvornikov

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引用次数: 0

摘要

提出了一种无电流镜的补偿式稳压器(CVR)结构，该结构可在单型硅(Si)、碳化硅(SiC)或砷化镓(GaAs) jfet上实现。使用Si, SiC和GaAs技术可以确保CVR在恶劣的工作条件下以低噪声水平可靠运行。计算机仿真结果表明，由于采用了新型电路，所提出的硅晶场效应管CVR在低温范围内发挥了主要功能，并具有抗穿透辐射的特点。

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JFET (Si,SiC, GaAs) Compensating Voltage Regulators for the Operation with Sensor Interfaces of Physical Quantities at Low Temperatures

A new architecture of the compensating voltage regulator (CVR) without current mirrors is presented, which can be implemented on the single-type silicon (Si), silicon carbide (SiC) or gallium arsenide (GaAs) JFETs. The use of Si, SiC and GaAs technologies makes it possible to ensure reliable operation of the CVR in severe operating conditions at a low noise level. The computer simulation results show that the proposed Si JFET CVR performs (due to new circuitry) its main functions in the cryogenic temperature range and it is characterized by the resistance to the penetrating radiation.

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2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)

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