{"title":"量子点激光器的外延生长和纳米结构物理","authors":"Y. Arakawa","doi":"10.1109/LEOS.1996.565260","DOIUrl":null,"url":null,"abstract":"We succeeded in the first demonstration of a vertical microcavity quantum dot laser operated at 77K. The microcavity (/spl lambda/=985nm) consists of an InGaAs quantum dot layer grown by the S-K growth mode with MOCVD, located between two AlAs-Al/sub 0.2/Ga/sub 0.8/As distributed Bragg reflector mirrors.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Epitaxial growth and physics of nanostructures for quantum dot lasers\",\"authors\":\"Y. Arakawa\",\"doi\":\"10.1109/LEOS.1996.565260\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We succeeded in the first demonstration of a vertical microcavity quantum dot laser operated at 77K. The microcavity (/spl lambda/=985nm) consists of an InGaAs quantum dot layer grown by the S-K growth mode with MOCVD, located between two AlAs-Al/sub 0.2/Ga/sub 0.8/As distributed Bragg reflector mirrors.\",\"PeriodicalId\":332726,\"journal\":{\"name\":\"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-11-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOS.1996.565260\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.1996.565260","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
我们成功地首次演示了在77K下工作的垂直微腔量子点激光器。微腔(/spl lambda/=985nm)由一个采用MOCVD的S-K生长方式生长的InGaAs量子点层组成,位于两个ala - al /sub 0.2/Ga/sub 0.8/As分布布拉格反射镜之间。
Epitaxial growth and physics of nanostructures for quantum dot lasers
We succeeded in the first demonstration of a vertical microcavity quantum dot laser operated at 77K. The microcavity (/spl lambda/=985nm) consists of an InGaAs quantum dot layer grown by the S-K growth mode with MOCVD, located between two AlAs-Al/sub 0.2/Ga/sub 0.8/As distributed Bragg reflector mirrors.