基于打击时间和多周期效应的高级软误码率估计

Ryan H.-M. Huang, Charles H.-P. Wen
{"title":"基于打击时间和多周期效应的高级软误码率估计","authors":"Ryan H.-M. Huang, Charles H.-P. Wen","doi":"10.1145/2593069.2593081","DOIUrl":null,"url":null,"abstract":"Soft error rate (SER) has become a critical reliability issue for CMOS designs due to continuous technology scaling. However, the striking-time and multi-cycle effects have not been properly considered in SER for advanced CMOS designs. Therefore, in this paper, the striking-time and multi-cycle effects are formulated into the problem of SER estimation, and then a SER analysis framework is proposed, accordingly. Experimental results show that SERs on the benchmark circuits are seriously underestimated when ignoring both effects. Moreover, SERs increase more on those high-performance or low-power CMOS designs. New treatment to SER needs to be explored in the future.","PeriodicalId":433816,"journal":{"name":"2014 51st ACM/EDAC/IEEE Design Automation Conference (DAC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Advanced soft-error-rate (SER) estimation with striking-time and multi-cycle effects\",\"authors\":\"Ryan H.-M. Huang, Charles H.-P. Wen\",\"doi\":\"10.1145/2593069.2593081\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Soft error rate (SER) has become a critical reliability issue for CMOS designs due to continuous technology scaling. However, the striking-time and multi-cycle effects have not been properly considered in SER for advanced CMOS designs. Therefore, in this paper, the striking-time and multi-cycle effects are formulated into the problem of SER estimation, and then a SER analysis framework is proposed, accordingly. Experimental results show that SERs on the benchmark circuits are seriously underestimated when ignoring both effects. Moreover, SERs increase more on those high-performance or low-power CMOS designs. New treatment to SER needs to be explored in the future.\",\"PeriodicalId\":433816,\"journal\":{\"name\":\"2014 51st ACM/EDAC/IEEE Design Automation Conference (DAC)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 51st ACM/EDAC/IEEE Design Automation Conference (DAC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/2593069.2593081\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 51st ACM/EDAC/IEEE Design Automation Conference (DAC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2593069.2593081","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

软误差率(SER)已成为CMOS设计的一个关键的可靠性问题,由于不断的技术规模。然而,在先进的CMOS设计中,在SER中没有适当地考虑打击时间和多周期效应。因此,本文将走时效应和多周期效应纳入到SER估计问题中,并提出了相应的SER分析框架。实验结果表明,当忽略这两种影响时,基准电路上的SERs被严重低估。此外,在那些高性能或低功耗CMOS设计上,SERs增加更多。未来需要探索新的治疗SER的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Advanced soft-error-rate (SER) estimation with striking-time and multi-cycle effects
Soft error rate (SER) has become a critical reliability issue for CMOS designs due to continuous technology scaling. However, the striking-time and multi-cycle effects have not been properly considered in SER for advanced CMOS designs. Therefore, in this paper, the striking-time and multi-cycle effects are formulated into the problem of SER estimation, and then a SER analysis framework is proposed, accordingly. Experimental results show that SERs on the benchmark circuits are seriously underestimated when ignoring both effects. Moreover, SERs increase more on those high-performance or low-power CMOS designs. New treatment to SER needs to be explored in the future.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信