{"title":"基于电阻负载LPF/ hpf交换级间网络两级放大器设计的l波段SiGe HBT有源移相器","authors":"Y. Itoh","doi":"10.1109/APMC46564.2019.9038416","DOIUrl":null,"url":null,"abstract":"An L-band 4-bit SiGe HBT active phase shifter is presented. It is based on two-stage amplifier designs with resistor-loaded LPF/HPF-switching interstage networks. A phase shifting can be accomplished by varying the value of a bridging resistor and/or a characteristic resistance of the filter. The implemented active phase shifter has achieved a gain greater than 20dB, a gain error less than 1.8dB and a phase error less than 9 degrees at 0.8 GHz for all bits.","PeriodicalId":162908,"journal":{"name":"2019 IEEE Asia-Pacific Microwave Conference (APMC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An L-Band SiGe HBT Active Phase Shifter Based on Two-Stage Amplifier Designs with Resistor-Loaded LPF/HPF-Switching Interstage Networks\",\"authors\":\"Y. Itoh\",\"doi\":\"10.1109/APMC46564.2019.9038416\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An L-band 4-bit SiGe HBT active phase shifter is presented. It is based on two-stage amplifier designs with resistor-loaded LPF/HPF-switching interstage networks. A phase shifting can be accomplished by varying the value of a bridging resistor and/or a characteristic resistance of the filter. The implemented active phase shifter has achieved a gain greater than 20dB, a gain error less than 1.8dB and a phase error less than 9 degrees at 0.8 GHz for all bits.\",\"PeriodicalId\":162908,\"journal\":{\"name\":\"2019 IEEE Asia-Pacific Microwave Conference (APMC)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE Asia-Pacific Microwave Conference (APMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APMC46564.2019.9038416\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE Asia-Pacific Microwave Conference (APMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APMC46564.2019.9038416","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An L-Band SiGe HBT Active Phase Shifter Based on Two-Stage Amplifier Designs with Resistor-Loaded LPF/HPF-Switching Interstage Networks
An L-band 4-bit SiGe HBT active phase shifter is presented. It is based on two-stage amplifier designs with resistor-loaded LPF/HPF-switching interstage networks. A phase shifting can be accomplished by varying the value of a bridging resistor and/or a characteristic resistance of the filter. The implemented active phase shifter has achieved a gain greater than 20dB, a gain error less than 1.8dB and a phase error less than 9 degrees at 0.8 GHz for all bits.
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