具有特殊设计的高通流选择性选择器

2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Pub Date : 2018-11-01 DOI:10.1109/CICTA.2018.8706096

Qi Lin, Qu Cheng, H. Tong, X. Miao

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引用次数: 0

摘要

在这封信中，我们提出了一种特殊的设计方法来实现高通流和选择性的选择器。通过引入Cu作为离子供应层，我们提出的选择器提供有限的Cu离子形成弱灯丝，在电压超过Vth时打开，并有效地收缩Cu离子击穿灯丝，在电压低于Vhold时关闭。同时，高缺陷密度和宽带隙的硫系GeSe有助于Cu原子的扩散过程，提高了选择性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Selector with Special Design for High on-current and Selectivity

In this letter, we proposed a special design method to realize both high on-current and selectivity of selectors. By introducing CuS as ion supply layer, our proposed selector supplies limited Cu ions to form weak filament to switch on at voltage over Vth, and effectively retract Cu ions to break down the filament to switch off at voltage lower than Vhold. Meanwhile, high-defect-density and wide-band-gap chalcogenide GeSe assists the diffusion process of Cu atoms and enhance selectivity.

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来源期刊

2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

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