M. Elkhouly, Y. Mao, S. Glisic, C. Meliani, F. Ellinger, J. Scheytt
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A 240 GHz direct conversion IQ receiver in 0.13 μm SiGe BiCMOS technology
A 240 GHz direct conversion IQ receiver manufactured in 0.13 SiGe BiCMOS technology with fT/fmax of 300/500 GHz is presented. The receiver consists of a four stage LNA, an active power divider, an LO IQ generation network, and direct down-conversion fundamental mixers. The integrated IQ receiver yields a conversion gain of 18 dB, an 18 dB simulated DSB NF, and a 3 dB bandwidth of 25 GHz. The required 245 GHz LO power is in the order of -10 dBm. The receiver exhibits an IQ amplitude and phase imbalance of 1 dB and 3° respectively. It draws 135 mA from the 3.5 V supply and 20 mA from 2 V.
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