绝缘栅双极晶体管的锁存预防

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs Pub Date : 1993-05-18 DOI:10.1109/ISPSD.1993.297074

A. Nezar, P. Mok, C. Salama

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引用次数: 6

摘要

提出了一种提高横向绝缘栅双极晶体管锁存能力的方法。阴极处的浅沟槽用于减少p基电阻和消除p井电阻，从而防止器件在低电压下锁存。沟槽式光路的锁存电流比传统的光路高。保持电压远远超过饱和电压，允许设备在高静态功率下工作。

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Latch-up prevention in insulated gate bipolar transistors

A technique for improving the latch-up capability of the LIGBT (lateral insulated-gate bipolar transistor) is proposed. A shallow trench at the cathode is used to reduce the p-base resistance and eliminate the p-well resistance, and consequently prevent the device from latching-up at low voltages. The latch-up current for the trenched LIGBT is higher than that of a conventional LIGBT. The holding voltage exceeds the saturation voltage by far and allows the device to operate at high static power.<>

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来源期刊

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs

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