轨迹变形技术在外延薄膜生长中的应用

Proceedings of the 1999 American Control Conference (Cat. No. 99CH36251) Pub Date : 1999-12-01 DOI:10.1109/ACC.1999.782435

A. Engelmann, D. Meyer, J. Hauser, R. Caflisch

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引用次数: 2

摘要

最近的一些进展使得以形式化的方式探索分子束外延过程中外延生长的轨迹空间成为可能。本文回顾了轨迹变形的基本原理，并介绍了轨迹变形可以用于探索外延薄膜生长系统的轨迹空间的结果。我们推导了一个适用于变形的简化生长模型，并给出了这个模型。进行了综述。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Trajectory morphing applied to epitaxial thin film growth

Several recent developments have made it possible to begin exploring in formal ways the trajectory space of epitaxial growth during molecular beam epitaxy. This paper reviews the fundamentals of trajectory morphing and presents results showing that trajectory morphing may be used to explore the trajectory space of an epitaxial thin film growth system. We have derived a simplified growth model, suitable for use in morphing, and this is also presented. are reviewed.

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Proceedings of the 1999 American Control Conference (Cat. No. 99CH36251)

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