[110]表面取向Si衬底上超薄栅氧化p- mosfet的110 GHz截止频率

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) Pub Date : 2002-06-11 DOI:10.1109/VLSIT.2002.1015431

H. Momose, T. Ohguro, K. Kojima, S. Nakamura, Y. Toyoshima

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引用次数: 20

摘要

首次研究了[110]表面取向Si衬底上超薄栅氧化CMOS的直流和射频模拟特性。[110]衬底上的p-MOSFET的Gm是[100]衬底上的1.9倍，即使在直接隧道状态下的栅极氧化物中也是如此。在栅极长度为0.11 /spl mu/m、栅极氧化物长度为1.5 nm的p-MOSFET中获得了110 GHz的极高截止频率。

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110 GHz cutoff frequency of ultra-thin gate oxide p-MOSFETs on [110] surface-oriented Si substrate

The DC and RF analog characteristics of ultra-thin gate oxide CMOS on [110] surface-oriented Si substrate were investigated for the first time. Gm of p-MOSFET on [110] substrate is 1.9 times greater than that on [100] substrate, even in gate oxides in a direct-tunneling regime. An extremely high cut-off frequency of 110 GHz was obtained in 0.11 /spl mu/m gate length p-MOSFET with 1.5 nm gate oxide.

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2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)

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