InGaP/GaAs谐振隧道晶体管(RTT)

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791630

W. Liu, Y. Shie, W. Chang, S. Feng, K. Yu, J. Yan

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引用次数: 0

摘要

本文制作并演示了一种新型InGaP/GaAs超晶格发射极谐振隧道双极晶体管(SE-RTBT)。使用5周期InGaP/GaAs超晶格服务于RT路线和少数载流子的约束势垒。由于InGaP/GaAs异质界面处存在较大的价带不连续(/spl Delta/E/sub V/)，获得了较高的电流增益(/spl beta//sub max//spl sime/220)。此外，在室温下电流-电压特性的饱和区和正向有源区都发现了由RT效应引起的n形负微分电阻(NDR)现象。

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InGaP/GaAs resonant-tunneling transistor (RTT)

In this letter, a new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) is fabricated and demonstrated. A 5-period InGaP/GaAs superlattice is used to serve the RT route and the confinement barrier for minority carriers. Due to the large valence band discontinuity (/spl Delta/E/sub V/) at the InGaP/GaAs heterointerface, a high current gain (/spl beta//sub max//spl sime/220) is obtained. Furthermore, the interesting N-shaped negative-differential-resistance (NDR) phenomena resulting from RT effect are found both in the saturation and forward-active region of the current-voltage characteristics at room temperature.

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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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