双向联想存储器中忆阻器阵列的电流反馈编程方法

Yonglei Zhao, Bo Li, G. Shi
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引用次数: 8

摘要

基于忆阻器的人工神经网络电路的实现需要高效、准确的方法来对代表突触权的忆阻进行编程。本文提出了一种基于反馈的记忆电阻阵列编程方法,该方法既节省了编程时间,又降低了电路复杂度。以规模为6×6的双向联想记忆(BAM)神经网络为例,利用Verilog-AMS在Cadence集成电路仿真环境中验证了所提出的方法。利用MATLAB软件,以3对俄罗斯方块模式为训练集,学习BAM的权重矩阵。仿真结果表明,所编记忆体BAM电路的正确性和所提方法的有效性,可用于其它神经网络电路的突触权值设置。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A current-feedback method for programming memristor array in bidirectional associative memory
Memristor-based realization of artificial neural network (ANN) circuits require efficient and accurate methods for programming memristance which represents the synaptic weight. A novel feedback-based method is proposed in this paper for programming memristor array, which trades off the time-consuming of programming and circuit complexity. A case of size 6×6 bidirectional associative memory (BAM) neural network is introduced for verification of the proposed method in Cadence integrated circuit simulation environment using Verilog-AMS. The weight matrix of BAM is learned by software MATLAB with a training set of 3 pairs of Tetris patterns. Simulation result shows that the correctness of the programmed memristive BAM circuit and the effectiveness of the proposed method that can be adopted for setting synapse weight in other ANN circuit designs.
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