AlGaAs/GaAs多量子阱超发光二极管性能的数值分析

2013 International Conference on Advanced Optoelectronics and Lasers (CAOL 2013) Pub Date : 2013-11-07 DOI:10.1109/CAOL.2013.6657549

A. Asgari, P. Navaeipour

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引用次数: 1

摘要

本文对AlGaAs/GaAs多量子阱超发光二极管的性能进行了数值研究。在该装置中，分析了光增益、输出功率与腔长和密度态的关系。结果表明，光增益和频宽随密度态的增加而增加。输出功率随空腔长度的增加而增加，而频宽随空腔长度的增加而减小。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Numerical analysis of the performance of AlGaAs/GaAs multi-quantum well Superluminescent diodes

In this paper we have investigated numerically the performance of AlGaAs/GaAs multi-quantum well superluminescent diodes. In this device the dependence of optical gain, output power on the cavity length and the density states have been analyzed. It is observed that the optical gain and its FWHM bandwidth increase with increasing the density state. Also, the output power increases with increasing the cavity length, whereas the FWHM bandwidth decreases..

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来源期刊

2013 International Conference on Advanced Optoelectronics and Lasers (CAOL 2013)

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