高灵敏度蓝宝石上硅磁二极管

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1977.189178

G. Kamarinos, P. Viktorovitch, S. Cristoloveanu, J. Borel, R. Staderini

{"title":"高灵敏度蓝宝石上硅磁二极管","authors":"G. Kamarinos, P. Viktorovitch, S. Cristoloveanu, J. Borel, R. Staderini","doi":"10.1109/IEDM.1977.189178","DOIUrl":null,"url":null,"abstract":"The values of recombination parameters (bulk lifetime and surface recombination velocities) of films of Silicon On Sapphire allow the realization of magnetodiodes, which are both very sensitive and compatible with the VLSI Technology. The S. O. S. magnetodiodes we present exhibit an average sensitiveness on the order of some 150 mA/Tesla (10 times the sensitiveness of Hall effect). Besides very low magnetic fields (B = 10-8T = 10γ) are easily detectable.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"469 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Silicon on sapphire magnetodiodes of high sensitiveness\",\"authors\":\"G. Kamarinos, P. Viktorovitch, S. Cristoloveanu, J. Borel, R. Staderini\",\"doi\":\"10.1109/IEDM.1977.189178\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The values of recombination parameters (bulk lifetime and surface recombination velocities) of films of Silicon On Sapphire allow the realization of magnetodiodes, which are both very sensitive and compatible with the VLSI Technology. The S. O. S. magnetodiodes we present exhibit an average sensitiveness on the order of some 150 mA/Tesla (10 times the sensitiveness of Hall effect). Besides very low magnetic fields (B = 10-8T = 10γ) are easily detectable.\",\"PeriodicalId\":218912,\"journal\":{\"name\":\"1977 International Electron Devices Meeting\",\"volume\":\"469 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1977.189178\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1977.189178","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

蓝宝石上硅薄膜的复合参数(体寿命和表面复合速度)的值允许实现磁致二极体，既非常敏感，又与超大规模集成电路技术兼容。我们提出的s.o.s.磁二极管的平均灵敏度约为150 mA/Tesla(霍尔效应灵敏度的10倍)。此外，很容易检测到极低的磁场(B = 10-8T = 10γ)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Silicon on sapphire magnetodiodes of high sensitiveness

The values of recombination parameters (bulk lifetime and surface recombination velocities) of films of Silicon On Sapphire allow the realization of magnetodiodes, which are both very sensitive and compatible with the VLSI Technology. The S. O. S. magnetodiodes we present exhibit an average sensitiveness on the order of some 150 mA/Tesla (10 times the sensitiveness of Hall effect). Besides very low magnetic fields (B = 10-8T = 10γ) are easily detectable.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1977 International Electron Devices Meeting

自引率

0.00%

发文量