J. Curtis, A. Pham, M. Chirala, F. Aryanfar, Zhouyue Pi
{"title":"一种ka波段多赫蒂功率放大器,输出功率为25.1 dBm,峰值PAE为38%,回退PAE为27%","authors":"J. Curtis, A. Pham, M. Chirala, F. Aryanfar, Zhouyue Pi","doi":"10.1109/RFIC.2013.6569601","DOIUrl":null,"url":null,"abstract":"We present the design and development of the first fully integrated, two stage Doherty power amplifier (DPA) in the Ka-Band. The DPA is fabricated in a 0.15-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. At 26.4 GHz, the amplifier achieves measured small signal gain of 10.3 dB, output power at 1-dB compression point (P1dB) of 25.1 dBm, peak power added efficiency (PAE) of 38%, and PAE of 27% at 6 dB back-off power. To the best of the author's knowledge, this Doherty circuit is the first fully integrated millimeter-wave amplifier that achieves the highest power and a recorded 27% PAE at 6-dB back-off and each unit amplifier has 2 stages.","PeriodicalId":203521,"journal":{"name":"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"29","resultStr":"{\"title\":\"A Ka-Band doherty power amplifier with 25.1 dBm output power, 38% peak PAE and 27% back-off PAE\",\"authors\":\"J. Curtis, A. Pham, M. Chirala, F. Aryanfar, Zhouyue Pi\",\"doi\":\"10.1109/RFIC.2013.6569601\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present the design and development of the first fully integrated, two stage Doherty power amplifier (DPA) in the Ka-Band. The DPA is fabricated in a 0.15-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. At 26.4 GHz, the amplifier achieves measured small signal gain of 10.3 dB, output power at 1-dB compression point (P1dB) of 25.1 dBm, peak power added efficiency (PAE) of 38%, and PAE of 27% at 6 dB back-off power. To the best of the author's knowledge, this Doherty circuit is the first fully integrated millimeter-wave amplifier that achieves the highest power and a recorded 27% PAE at 6-dB back-off and each unit amplifier has 2 stages.\",\"PeriodicalId\":203521,\"journal\":{\"name\":\"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"29\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2013.6569601\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2013.6569601","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Ka-Band doherty power amplifier with 25.1 dBm output power, 38% peak PAE and 27% back-off PAE
We present the design and development of the first fully integrated, two stage Doherty power amplifier (DPA) in the Ka-Band. The DPA is fabricated in a 0.15-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. At 26.4 GHz, the amplifier achieves measured small signal gain of 10.3 dB, output power at 1-dB compression point (P1dB) of 25.1 dBm, peak power added efficiency (PAE) of 38%, and PAE of 27% at 6 dB back-off power. To the best of the author's knowledge, this Doherty circuit is the first fully integrated millimeter-wave amplifier that achieves the highest power and a recorded 27% PAE at 6-dB back-off and each unit amplifier has 2 stages.