利用光反射光谱和棱镜耦合器方法表征II-VI合金半导体层

2000 2nd International Conference on Transparent Optical Networks. Conference Proceedings (Cat. No.00EX408) Pub Date : 2000-06-05 DOI:10.1109/ICTON.2000.874120

W. Bala

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引用次数: 0

摘要

用MBE法在不同温度下在GaAs[100]取向的衬底上生长出了厚度达2微米的Zn1-xMgxSe外延膜。本文还报道了一系列亚硒化锌外延合金的生长和硒化锌在[111]碲化锌晶体上的生长，并讨论了这些薄膜在集成光学应用中的意义。用光反射光谱法和棱镜耦合器法测定了折射率作为其组成的函数。由棱镜耦合器激发的导模有效折射率测定的薄膜硒化锌合金的折射率是可重复的，并且与块状材料的测量值接近。

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Characterization of II-VI alloy semiconductor layers by photoreflectance spectroscopy and prism-coupler method

Epitaxial films of Zn1-xMgxSe have been grown with thicknesses up to 2 micrometers on GaAs [100] oriented substrates at different temperatures by MBE method. The growth of a range of epitaxial zinc sulphoselenide alloys and the growth of zinc selenide on [111] zinc telluride crystals are also reported and the significance of such films for applications in integrated optics is discussed. The refractive indices are determined experimentally by photoreflectance spectroscopy and prism-coupler method as a function of their composition. The refractive index of thin film zinc selenide alloys, determined from the measured effective indices of guided modes excited by a prism coupler, is shown to be reproducible and close to values measured for bulk material.

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2000 2nd International Conference on Transparent Optical Networks. Conference Proceedings (Cat. No.00EX408)

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