硅衬底上的微带衰减器与紧凑型EBG(或PBG)电池

TELSIKS 2005 - 2005 uth International Conference on Telecommunication in ModernSatellite, Cable and Broadcasting Services Pub Date : 2005-09-28 DOI:10.1109/TELSKS.2005.1572147

D. Nešić

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引用次数: 1

摘要

本文对一种新型的硅衬底λ /4衰减器进行了仿真、制作和测量。lambda/4 open first存根被实现为EBG(或PBG)单元。与常规情况相比，所实现结构的中心频率降低约35%

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Microstrip Attenuator on Silicon Substrate with a Compact EBG (or PBG) Cell

In this paper a new type of lambda/4 attenuator on silicon substrate is simulated, fabricated and measured. A lambda/4 open first stub is realized as an EBG (or PBG) cell. Reduction of the central ten frequency of the realized structures is about 35% comparing to the conventional case

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TELSIKS 2005 - 2005 uth International Conference on Telecommunication in ModernSatellite, Cable and Broadcasting Services

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