碳纳米管场效应管(cntfet)的高场效应迁移率分析

2021 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT) Pub Date : 2021-07-09 DOI:10.1109/CONECCT52877.2021.9622595

Satyam Singh, Basavprasad Siriyannavar, Sidharth Sitesh, P. Vimala, T. Arunsamuel

{"title":"碳纳米管场效应管(cntfet)的高场效应迁移率分析","authors":"Satyam Singh, Basavprasad Siriyannavar, Sidharth Sitesh, P. Vimala, T. Arunsamuel","doi":"10.1109/CONECCT52877.2021.9622595","DOIUrl":null,"url":null,"abstract":"This paper analyzed the Carbon Nano Tube (CNT) field-effect carrier mobility at the low field in the back-gated CNT-FET devices. This model is based on calculating the mean free paths of carrier concerning the several scattering mechanisms and multi-band transport. The mobility-based parameters like charge density and conductance are analyzed by varying Carbon Nano Tube”s length and diameter. It's observed that high ballistic transport was achieved when the length of CNT was less than the mean free path of carrier.","PeriodicalId":164499,"journal":{"name":"2021 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Analysis of High Field effect Mobility in Carbon Nanotube FETs(CNTFETs)\",\"authors\":\"Satyam Singh, Basavprasad Siriyannavar, Sidharth Sitesh, P. Vimala, T. Arunsamuel\",\"doi\":\"10.1109/CONECCT52877.2021.9622595\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper analyzed the Carbon Nano Tube (CNT) field-effect carrier mobility at the low field in the back-gated CNT-FET devices. This model is based on calculating the mean free paths of carrier concerning the several scattering mechanisms and multi-band transport. The mobility-based parameters like charge density and conductance are analyzed by varying Carbon Nano Tube”s length and diameter. It's observed that high ballistic transport was achieved when the length of CNT was less than the mean free path of carrier.\",\"PeriodicalId\":164499,\"journal\":{\"name\":\"2021 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CONECCT52877.2021.9622595\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CONECCT52877.2021.9622595","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文分析了背门控碳纳米管场效应场效应管(CNT)器件在低场的场效应载流子迁移率。该模型是基于考虑多种散射机制和多波段输运的载流子平均自由程的计算。通过改变碳纳米管的长度和直径，分析了基于迁移率的电荷密度和电导等参数。观察到当碳纳米管的长度小于载流子的平均自由程时，实现了高弹道输运。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis of High Field effect Mobility in Carbon Nanotube FETs(CNTFETs)

This paper analyzed the Carbon Nano Tube (CNT) field-effect carrier mobility at the low field in the back-gated CNT-FET devices. This model is based on calculating the mean free paths of carrier concerning the several scattering mechanisms and multi-band transport. The mobility-based parameters like charge density and conductance are analyzed by varying Carbon Nano Tube”s length and diameter. It's observed that high ballistic transport was achieved when the length of CNT was less than the mean free path of carrier.

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来源期刊

2021 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)

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