{"title":"氧化锌薄膜功函数的测定","authors":"K. Sundaram, A. Khan","doi":"10.1109/SECON.1996.510155","DOIUrl":null,"url":null,"abstract":"Zinc oxide-silicon heterojunctions were fabricated using both n- and p-type silicon. The zinc oxide films were deposited by magnetron sputtering process at various substrate temperatures to form these devices. The electrical properties of these devices were measured and the work function of the zinc oxide was evaluated.","PeriodicalId":338029,"journal":{"name":"Proceedings of SOUTHEASTCON '96","volume":"11 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"120","resultStr":"{\"title\":\"Work function determination of zinc oxide films\",\"authors\":\"K. Sundaram, A. Khan\",\"doi\":\"10.1109/SECON.1996.510155\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Zinc oxide-silicon heterojunctions were fabricated using both n- and p-type silicon. The zinc oxide films were deposited by magnetron sputtering process at various substrate temperatures to form these devices. The electrical properties of these devices were measured and the work function of the zinc oxide was evaluated.\",\"PeriodicalId\":338029,\"journal\":{\"name\":\"Proceedings of SOUTHEASTCON '96\",\"volume\":\"11 5\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"120\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of SOUTHEASTCON '96\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SECON.1996.510155\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of SOUTHEASTCON '96","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SECON.1996.510155","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Zinc oxide-silicon heterojunctions were fabricated using both n- and p-type silicon. The zinc oxide films were deposited by magnetron sputtering process at various substrate temperatures to form these devices. The electrical properties of these devices were measured and the work function of the zinc oxide was evaluated.
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