用于3-5 GHz超宽带应用的集成CMOS低噪声放大器

2005 IEEE Conference on Electron Devices and Solid-State Circuits Pub Date : 2005-12-19 DOI:10.1109/EDSSC.2005.1635247

Shih-Chih Chen, Ruey-Lue Wang, Ming-Lung Kung, Hsiang-Chen Kuo

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引用次数: 22

摘要

对于超宽带通信应用，本文提出了一种基于0.18 um TSMC CMOS技术的两级拓扑结构来实现低噪声放大器(LNA)。我们采用压流电阻反馈和分峰电路，在3 GHz ~ 5 GHz的带宽范围内，获得了最大增益在14.0 dB，噪声系数在5.25 dB以下，输入输出反射系数在-11dB以下的测量结果。

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An Integrated CMOS Low Noise Amplifier for 3-5 GHz UWB Applications

For the ultra-wide-band communication applications, this work presents a two-stage topology to implement a low noise amplifier (LNA) based on the 0.18 um TSMC CMOS technology. We adopt the voltage-current resistor feedback and shunt-peaked circuit to obtain measurement results of maximum gain in 14.0 dB, noise figure below 5.25 dB, input and output reflection coefficients below -11dB within the bandwidth between 3 GHz to 5 GHz.

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来源期刊

2005 IEEE Conference on Electron Devices and Solid-State Circuits

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