原位氮掺杂对mocvd生长Al/sub 2/O/sub 3/改善多晶硅栅极mosfet电学特性的影响

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) Pub Date : 2002-06-11 DOI:10.1109/VLSIT.2002.1015447

Y. Tanida, Y. Tamura, S. Miyagaki, M. Yamaguchi, C. Yoshida, Y. Sugiyama, H. Tanaka

{"title":"原位氮掺杂对mocvd生长Al/sub 2/O/sub 3/改善多晶硅栅极mosfet电学特性的影响","authors":"Y. Tanida, Y. Tamura, S. Miyagaki, M. Yamaguchi, C. Yoshida, Y. Sugiyama, H. Tanaka","doi":"10.1109/VLSIT.2002.1015447","DOIUrl":null,"url":null,"abstract":"The effect of nitrogen doping into Al/sub 2/O/sub 3/ gate dielectric grown by Metal Organic Chemical Vapor Deposition (MOCVD) on MOS device characteristics is described for the first time. The nitrogen doped Al/sub 2/O/sub 3/ (Al/sub 2/O/sub 3/:N) MOSFET has an interface trap density (D/sub it/) as low as 4.3/spl times/10/sup 10/ cm/sup -2/ eV/sup -1/, half that of non-doped Al/sub 2/O/sub 3/ (1.0/spl times/10/sup 11/ cm/sup -2/ eV/sup -1/), and has less C-V hysteresis (39 mV) than that (69 mV) of Al/sub 2/O/sub 3/. These improvements are attributed to nitrogen doping into Al/sub 2/O/sub 3/, which also improves the corresponding MOSFET characteristics of current drivability (I/sub dsat/).","PeriodicalId":103040,"journal":{"name":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Effect of in-situ nitrogen doping into MOCVD-grown Al/sub 2/O/sub 3/ to improve electrical characteristics of MOSFETs with polysilicon gate\",\"authors\":\"Y. Tanida, Y. Tamura, S. Miyagaki, M. Yamaguchi, C. Yoshida, Y. Sugiyama, H. Tanaka\",\"doi\":\"10.1109/VLSIT.2002.1015447\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of nitrogen doping into Al/sub 2/O/sub 3/ gate dielectric grown by Metal Organic Chemical Vapor Deposition (MOCVD) on MOS device characteristics is described for the first time. The nitrogen doped Al/sub 2/O/sub 3/ (Al/sub 2/O/sub 3/:N) MOSFET has an interface trap density (D/sub it/) as low as 4.3/spl times/10/sup 10/ cm/sup -2/ eV/sup -1/, half that of non-doped Al/sub 2/O/sub 3/ (1.0/spl times/10/sup 11/ cm/sup -2/ eV/sup -1/), and has less C-V hysteresis (39 mV) than that (69 mV) of Al/sub 2/O/sub 3/. These improvements are attributed to nitrogen doping into Al/sub 2/O/sub 3/, which also improves the corresponding MOSFET characteristics of current drivability (I/sub dsat/).\",\"PeriodicalId\":103040,\"journal\":{\"name\":\"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2002.1015447\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2002.1015447","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文首次研究了金属有机化学气相沉积(MOCVD) Al/sub 2/O/sub 3/栅极介质中氮掺杂对MOS器件特性的影响。氮掺杂的Al/sub 2/O/sub 3/ (Al/sub 2/O/sub 3/:N) MOSFET的界面阱密度(D/sub it/)低至4.3/spl次/10/sup 10/ cm/sup -2/ eV/sup -1/，是未掺杂Al/sub 2/O/sub 3/ (1.0/spl次/10/sup 11/ cm/sup -2/ eV/sup -1/)的一半，C-V迟滞(39 mV)小于Al/sub 2/O/sub 3/ (69 mV)。这些改进归功于氮掺杂到Al/sub 2/O/sub 3/中，这也改善了相应的MOSFET电流驱动特性(I/sub dsat/)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of in-situ nitrogen doping into MOCVD-grown Al/sub 2/O/sub 3/ to improve electrical characteristics of MOSFETs with polysilicon gate

The effect of nitrogen doping into Al/sub 2/O/sub 3/ gate dielectric grown by Metal Organic Chemical Vapor Deposition (MOCVD) on MOS device characteristics is described for the first time. The nitrogen doped Al/sub 2/O/sub 3/ (Al/sub 2/O/sub 3/:N) MOSFET has an interface trap density (D/sub it/) as low as 4.3/spl times/10/sup 10/ cm/sup -2/ eV/sup -1/, half that of non-doped Al/sub 2/O/sub 3/ (1.0/spl times/10/sup 11/ cm/sup -2/ eV/sup -1/), and has less C-V hysteresis (39 mV) than that (69 mV) of Al/sub 2/O/sub 3/. These improvements are attributed to nitrogen doping into Al/sub 2/O/sub 3/, which also improves the corresponding MOSFET characteristics of current drivability (I/sub dsat/).

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2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)

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