用TCAD模拟演示各种h-BN基二极管

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI:10.1109/CSW55288.2022.9930353

Ziyi He, K. Fu, Mingfei Xu, Jingan Zhou, Tao Li, Yuji Zhao

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摘要

六方氮化硼(h-BN)是目前TCAD Silvaco材料库中没有的一种材料，它在Silvaco Atlas中被手动定义为具有先前报道的物理性质。模拟了两个h-BN/GaN p-n二极管和一个横向h-BN肖特基势垒二极管，研究了它们在正偏压下的热学和电学特性，对未来的h-BN电子器件进行了初步的预测。

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Demonstration of Various h-BN Based Diodes with TCAD Simulation

Hexagonal boron nitride (h-BN), a material currently unavailable in the material library of TCAD Silvaco, is manually defined in Silvaco Atlas with the physics properties previously reported. Two h-BN/GaN p-n diodes and a lateral h-BN Schottky barrier diode are simulated, and their thermal and electrical characteristics at forward bias are investigated, which gives a preliminary forecast of the future h-BN electronics devices.

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来源期刊

2022 Compound Semiconductor Week (CSW)

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