多量子阱波导调制器结构中的激子带边电吸收

N. Hunt, P. Jessop
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引用次数: 1

摘要

从理论和实验两方面研究了电场对多量子阱结构激子带边吸收光谱的影响。比较了三种不同的精确求解量子阱能的方法。考虑了导带非抛物性和价带混合的小影响。记录了in - 12ga的透射光谱。88As-GaAs光波导调制器结构。利用该理论模型预测了不同电场作用下带边吸收长波尾的变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
EXCITONIC BAND-EDGE ELECTRO-ABSORPTION IN MULTIPLE-QUANTUM-WELL WAVEGUIDE MODULATOR STRUCTURES
Electric field induced changes in the excitonic band-edge absorption spectra of Multiple-Quantum-Well (MQW) structures were investigated theoretically and experimentally. A comparison was made of three different exactly solvable methods for calculating quantum-well energies. The small effects due to conduction-band nonparabolicity and valence-band mixing were included. Transmission spectra were recorded for an In.12Ga.88As-GaAs optical waveguide modulator structure. The theoretical model was used to predict the changes in the long-wavelength tail of the band-edge absorption for different electric fields.
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