{"title":"通过多写编码减少NAND闪存的写放大","authors":"A. Jagmohan, M. Franceschini, L. Lastras","doi":"10.1109/MSST.2010.5496985","DOIUrl":null,"url":null,"abstract":"The block erase requirement in NAND Flash devices leads to the need for garbage collection. Garbage collection results in write amplification, that is, to an increase in the number of physical page programming operations. Write amplification adversely impacts the limited lifetime of a NAND Flash device, and can add significant system overhead unless a large spare factor is maintained. This paper proposes a NAND Flash system which uses multi-write coding to reduce write amplification. Multi-write coding allows a NAND Flash page to be written more than once without requiring an intervening block erase. We present a novel two-write coding technique based on enumerative coding, which achieves linear coding rates with low computational complexity. The proposed technique also seeks to minimize memory wear by reducing the number of programmed cells per page write. We describe a system which uses lossless data compression in conjunction with multi-write coding, and show through simulations that the proposed system has significantly reduced write amplification and memory wear.","PeriodicalId":350968,"journal":{"name":"2010 IEEE 26th Symposium on Mass Storage Systems and Technologies (MSST)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"39","resultStr":"{\"title\":\"Write amplification reduction in NAND Flash through multi-write coding\",\"authors\":\"A. Jagmohan, M. Franceschini, L. Lastras\",\"doi\":\"10.1109/MSST.2010.5496985\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The block erase requirement in NAND Flash devices leads to the need for garbage collection. Garbage collection results in write amplification, that is, to an increase in the number of physical page programming operations. Write amplification adversely impacts the limited lifetime of a NAND Flash device, and can add significant system overhead unless a large spare factor is maintained. This paper proposes a NAND Flash system which uses multi-write coding to reduce write amplification. Multi-write coding allows a NAND Flash page to be written more than once without requiring an intervening block erase. We present a novel two-write coding technique based on enumerative coding, which achieves linear coding rates with low computational complexity. The proposed technique also seeks to minimize memory wear by reducing the number of programmed cells per page write. We describe a system which uses lossless data compression in conjunction with multi-write coding, and show through simulations that the proposed system has significantly reduced write amplification and memory wear.\",\"PeriodicalId\":350968,\"journal\":{\"name\":\"2010 IEEE 26th Symposium on Mass Storage Systems and Technologies (MSST)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"39\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE 26th Symposium on Mass Storage Systems and Technologies (MSST)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MSST.2010.5496985\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE 26th Symposium on Mass Storage Systems and Technologies (MSST)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MSST.2010.5496985","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Write amplification reduction in NAND Flash through multi-write coding
The block erase requirement in NAND Flash devices leads to the need for garbage collection. Garbage collection results in write amplification, that is, to an increase in the number of physical page programming operations. Write amplification adversely impacts the limited lifetime of a NAND Flash device, and can add significant system overhead unless a large spare factor is maintained. This paper proposes a NAND Flash system which uses multi-write coding to reduce write amplification. Multi-write coding allows a NAND Flash page to be written more than once without requiring an intervening block erase. We present a novel two-write coding technique based on enumerative coding, which achieves linear coding rates with low computational complexity. The proposed technique also seeks to minimize memory wear by reducing the number of programmed cells per page write. We describe a system which uses lossless data compression in conjunction with multi-write coding, and show through simulations that the proposed system has significantly reduced write amplification and memory wear.