27.6 MHz 297 μW 33 ppm/°C CMOS弛豫振荡器，具有可调温度补偿方案

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2017-10-01 DOI:10.1109/EDSSC.2017.8126497

Qiang Zhao, Ruibin Xie, Y. Ma, Fengbo Xie, Feng Lin, Shengdong Zhang

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引用次数: 0

摘要

采用180nm CMOS技术，设计了一个27.6 MHz 297 μW的弛豫振荡器。该振荡器采用可调温度补偿前馈方案，充电电流可通过4位数字微调信号稳定设定。我们已经证明了低于33.5 ppm/°C的频率变化，如果精度足够高，理论上可以接近0 ppm/°C。在实际生产中，由于采用了新颖的可调温度补偿方案，可以有效地校正加工过程中的不匹配和偏差。

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A 27.6 MHz 297 μW 33 ppm/°C CMOS relaxation oscillator with an adjustable temperature compensation scheme

A 27.6 MHz 297 μW relaxation oscillator is presented in this paper by using an 180-nm CMOS technology. The proposed oscillator employs an adjustable temperature compensation feedforward scheme, in which the charging current can be set steady by a four-bit digital trimming signal. We have demonstrated a frequency variation lower than 33.5 ppm/°C which could be close to 0 ppm/°C in theory if the precision is high enough. In practical production, it is effective to calibrate the mismatching and deviation of fabrication because of the novel adjustable temperature compensation scheme.

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2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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