用于光电器件的ZnTe/GaSb异质结构的生长和材料性能

2012 Symposium on Photonics and Optoelectronics Pub Date : 2012-05-21 DOI:10.1109/SOPO.2012.6271134

Xinyu Liu, J. Furdyna, Jin Fan, L. Ouyang, D. Smith, D. Ding, Yong-Hang Zhang

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引用次数: 0

摘要

本文报道了利用分子束外延(MBE)技术在GaSb(001)衬底上生长ZnTe/ gasb异质结构。利用x射线衍射(XRD)和高分辨率电子显微镜(HREM)对其结构性质进行了表征。椭偏性和光致发光(PL)被用来表征其光学性质。

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Growth and Material Properties of ZnTe/GaSb Heterostructures for Optoelectronic Device Applications

This paper reports the growth of ZnTe/GaSbheterostructures on GaSb (001) substrates using molecular beam epitaxy (MBE). X-ray diffraction (XRD) and high-resolution electron microscopy (HREM) are used to characterize the structural properties. Ellipsometryand photoluminescence (PL) are used to characterize the optical properties.

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2012 Symposium on Photonics and Optoelectronics

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