{"title":"平面内磁敏双霍尔装置","authors":"S. Lozanova, S. Noykov, A. Ivanov, C. Roumenin","doi":"10.1109/ET.2017.8124382","DOIUrl":null,"url":null,"abstract":"A novel in-plane magnetosensitive double Hall sensor, consisting of power supply and two identical three-contact и-Si cross-coupled architectures, realized in common technology process, is presented. High magnetosensitivity as well as increased metrological accuracy is achieved. The residual offset is about 160 times smaller than the internal ones. The obtained output voltage-to-residual offset ratio at magnetosensitivity of 98 V/AT (T = 300 K) is very promising, reaching 7.5×103 at magnetic induction IT.","PeriodicalId":127983,"journal":{"name":"2017 XXVI International Scientific Conference Electronics (ET)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"In-plane magnetosensitive double Hall device\",\"authors\":\"S. Lozanova, S. Noykov, A. Ivanov, C. Roumenin\",\"doi\":\"10.1109/ET.2017.8124382\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel in-plane magnetosensitive double Hall sensor, consisting of power supply and two identical three-contact и-Si cross-coupled architectures, realized in common technology process, is presented. High magnetosensitivity as well as increased metrological accuracy is achieved. The residual offset is about 160 times smaller than the internal ones. The obtained output voltage-to-residual offset ratio at magnetosensitivity of 98 V/AT (T = 300 K) is very promising, reaching 7.5×103 at magnetic induction IT.\",\"PeriodicalId\":127983,\"journal\":{\"name\":\"2017 XXVI International Scientific Conference Electronics (ET)\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 XXVI International Scientific Conference Electronics (ET)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ET.2017.8124382\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 XXVI International Scientific Conference Electronics (ET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ET.2017.8124382","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
摘要
提出了一种新型的平面内磁敏双霍尔传感器，该传感器由电源和两个相同的三触点и-Si交叉耦合结构组成，采用通用的工艺流程实现。实现了高磁灵敏度和更高的计量精度。剩余偏移量约为内部偏移量的160倍。在磁敏系数为98 V/ at (T = 300 K)时得到的输出电压与剩余偏置比非常有前景，在磁感应强度IT下达到7.5×103。
A novel in-plane magnetosensitive double Hall sensor, consisting of power supply and two identical three-contact и-Si cross-coupled architectures, realized in common technology process, is presented. High magnetosensitivity as well as increased metrological accuracy is achieved. The residual offset is about 160 times smaller than the internal ones. The obtained output voltage-to-residual offset ratio at magnetosensitivity of 98 V/AT (T = 300 K) is very promising, reaching 7.5×103 at magnetic induction IT.
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