{"title":"一种基于56nm SOI CMOS的28 ghz频带堆叠FET线性功率放大器IC，在P1dB和3db之间具有36.2%的PAE","authors":"Cuilin Chen, T. Sugiura, T. Yoshimasu","doi":"10.1109/RWS.2019.8714268","DOIUrl":null,"url":null,"abstract":"This paper presents a high efficiency linear stacked FET power amplifier (PA) IC for 5G wireless communication systems. An adaptive bias circuit is used to enhance linearity and back-off efficiency. In addition, third-order trans-conductance component (gm3) is cancelled by multi-cascode structure. The PA IC is designed, fabricated and fully evaluated in 56-nm SOI CMOS. At a supply voltage of 4 V, the PA IC has exhibited an output power of 20.0 dBm and a PAE of 38.1% at 1-dB gain compression point (P1dB). The PAEs at 3 dB and 6 dB back-off from P1dB are 36.2 % and 28.7 %, respectively. The output IP3 of 25.0 dBm is obtained.","PeriodicalId":131330,"journal":{"name":"2019 IEEE Radio and Wireless Symposium (RWS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 28-GHz-band Stacked FET Linear Power Amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS\",\"authors\":\"Cuilin Chen, T. Sugiura, T. Yoshimasu\",\"doi\":\"10.1109/RWS.2019.8714268\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a high efficiency linear stacked FET power amplifier (PA) IC for 5G wireless communication systems. An adaptive bias circuit is used to enhance linearity and back-off efficiency. In addition, third-order trans-conductance component (gm3) is cancelled by multi-cascode structure. The PA IC is designed, fabricated and fully evaluated in 56-nm SOI CMOS. At a supply voltage of 4 V, the PA IC has exhibited an output power of 20.0 dBm and a PAE of 38.1% at 1-dB gain compression point (P1dB). The PAEs at 3 dB and 6 dB back-off from P1dB are 36.2 % and 28.7 %, respectively. The output IP3 of 25.0 dBm is obtained.\",\"PeriodicalId\":131330,\"journal\":{\"name\":\"2019 IEEE Radio and Wireless Symposium (RWS)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE Radio and Wireless Symposium (RWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RWS.2019.8714268\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE Radio and Wireless Symposium (RWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RWS.2019.8714268","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 28-GHz-band Stacked FET Linear Power Amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS
This paper presents a high efficiency linear stacked FET power amplifier (PA) IC for 5G wireless communication systems. An adaptive bias circuit is used to enhance linearity and back-off efficiency. In addition, third-order trans-conductance component (gm3) is cancelled by multi-cascode structure. The PA IC is designed, fabricated and fully evaluated in 56-nm SOI CMOS. At a supply voltage of 4 V, the PA IC has exhibited an output power of 20.0 dBm and a PAE of 38.1% at 1-dB gain compression point (P1dB). The PAEs at 3 dB and 6 dB back-off from P1dB are 36.2 % and 28.7 %, respectively. The output IP3 of 25.0 dBm is obtained.
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