w波段InGaAs/InP PIN二极管单片集成开关

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI:10.1109/GAAS.1996.567888

E. Alekseev, D. Pavlidis, M. Dickmann, T. Hackbarth

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引用次数: 30

摘要

介绍了用于基于inp的w波段单片集成开关的InGaAs PIN二极管的设计、制造和实验特性。采用直径为10 /spl mu/m的二极管，击穿电压为17 V，导通电压为0.36 V，开关截止频率为6.3 THz。单片集成开关采用微带传输线和背面通孔进行低电感信号接地。采用基于径向存根的片上偏置设计，并通过片上w波段测试验证了开关的高频特性。SPST PIN单片开关在83 GHz时具有25 dB隔离、1.3 dB插入损耗和0.8 dB反射损耗。

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W-band InGaAs/InP PIN diode monolithic integrated switches

The design, fabrication, and experimental characteristics of InGaAs PIN diodes are presented for InP-based W-band monolithic integrated switches. The diodes with 10 /spl mu/m-diameter were used and showed a breakdown voltage of 17 V, a turn-on voltage of 0.36 V, and a switching cutoff frequency of 6.3 THz. The monolithic integrated switches employed microstrip transmission lines and backside via holes for low-inductance signal grounding. A radial stub-based design was used for on-chip biasing, and the high-frequency characteristics of the switches were verified by on-wafer W-band testing. The SPST PIN monolithic switch demonstrated 25 dB isolation, 1.3 dB insertion loss, and 0.8 dB reflection loss at 83 GHz.

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来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

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