R. Ribas, J. Lescot, J. Leclercq, J. Karam, F. Ndagijimana
{"title":"单片微机械平面螺旋变压器","authors":"R. Ribas, J. Lescot, J. Leclercq, J. Karam, F. Ndagijimana","doi":"10.1109/GAAS.1998.722692","DOIUrl":null,"url":null,"abstract":"Micromachined microwave passive devices have been successfully fabricated in a standard GaAs HEMT MMIC technology, through a straightforward, low-cost, maskless front-side bulk micromachining. Planar spiral inductors with the strips suspended individually have been possible because of the small 'open area' dimensions, needed to etch away some portions of the bulk material, and present numerous advantages with respect to the commonly used membrane-supported device, such as the reduced etching time and the elimination of fringing parasitic capacitances. In this paper, a two interleaved spiral inductor structure, in a 1:1 transformer-like configuration, has been fabricated and characterized up to 15 GHz, in order to demonstrate the features of this novel inductor. Moreover, heating and mechanical characteristics associated with the suspended devices are also briefly investigated.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Monolithic micromachined planar spiral transformer\",\"authors\":\"R. Ribas, J. Lescot, J. Leclercq, J. Karam, F. Ndagijimana\",\"doi\":\"10.1109/GAAS.1998.722692\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Micromachined microwave passive devices have been successfully fabricated in a standard GaAs HEMT MMIC technology, through a straightforward, low-cost, maskless front-side bulk micromachining. Planar spiral inductors with the strips suspended individually have been possible because of the small 'open area' dimensions, needed to etch away some portions of the bulk material, and present numerous advantages with respect to the commonly used membrane-supported device, such as the reduced etching time and the elimination of fringing parasitic capacitances. In this paper, a two interleaved spiral inductor structure, in a 1:1 transformer-like configuration, has been fabricated and characterized up to 15 GHz, in order to demonstrate the features of this novel inductor. Moreover, heating and mechanical characteristics associated with the suspended devices are also briefly investigated.\",\"PeriodicalId\":288170,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1998.722692\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1998.722692","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Micromachined microwave passive devices have been successfully fabricated in a standard GaAs HEMT MMIC technology, through a straightforward, low-cost, maskless front-side bulk micromachining. Planar spiral inductors with the strips suspended individually have been possible because of the small 'open area' dimensions, needed to etch away some portions of the bulk material, and present numerous advantages with respect to the commonly used membrane-supported device, such as the reduced etching time and the elimination of fringing parasitic capacitances. In this paper, a two interleaved spiral inductor structure, in a 1:1 transformer-like configuration, has been fabricated and characterized up to 15 GHz, in order to demonstrate the features of this novel inductor. Moreover, heating and mechanical characteristics associated with the suspended devices are also briefly investigated.