反应溅射法制备SiOx纳米薄膜的表征与制备

2012 9th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE) Pub Date : 2012-09-01 DOI:10.1109/ICEEE.2012.6421157

J. Alarcon-Salazar, M. Aceves-Mijares, S. Roman-Lopez, C. Falcony

{"title":"反应溅射法制备SiOx纳米薄膜的表征与制备","authors":"J. Alarcon-Salazar, M. Aceves-Mijares, S. Roman-Lopez, C. Falcony","doi":"10.1109/ICEEE.2012.6421157","DOIUrl":null,"url":null,"abstract":"Nano-metric layers were obtained by reactive sputtering using different oxygen/argon (O/Ar) flow rates. Si and SiO targets were used to make SiOx films (x≤2) and these were annealed at three different temperatures, 600 °C, 900 °C and 1100 °C during 30 minutes, in N2 ambient. The samples were characterized by Null Ellipsometry, Fourier Transform Infra Red (FTIR) spectroscopy, Photoluminescence (PL) and Atomic Force Microscopy (AFM). Results show that the as deposited films are off stoichiometric silicon, which move towards stoichiometric SiO2 with annealing. Poor photoluminescence was found. Average roughness (Sa) was determined between 2 a 4 nm after thermal treatments (TT).","PeriodicalId":162368,"journal":{"name":"2012 9th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)","volume":"23 5b 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Characterization and fabrication of SiOx nano-metric films, obtained by reactive sputtering\",\"authors\":\"J. Alarcon-Salazar, M. Aceves-Mijares, S. Roman-Lopez, C. Falcony\",\"doi\":\"10.1109/ICEEE.2012.6421157\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Nano-metric layers were obtained by reactive sputtering using different oxygen/argon (O/Ar) flow rates. Si and SiO targets were used to make SiOx films (x≤2) and these were annealed at three different temperatures, 600 °C, 900 °C and 1100 °C during 30 minutes, in N2 ambient. The samples were characterized by Null Ellipsometry, Fourier Transform Infra Red (FTIR) spectroscopy, Photoluminescence (PL) and Atomic Force Microscopy (AFM). Results show that the as deposited films are off stoichiometric silicon, which move towards stoichiometric SiO2 with annealing. Poor photoluminescence was found. Average roughness (Sa) was determined between 2 a 4 nm after thermal treatments (TT).\",\"PeriodicalId\":162368,\"journal\":{\"name\":\"2012 9th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)\",\"volume\":\"23 5b 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 9th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEEE.2012.6421157\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 9th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEEE.2012.6421157","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

采用不同氧/氩(O/Ar)流速的反应溅射法制备了纳米层。用Si和SiO靶材制备SiOx薄膜(x≤2)，在N2环境下，分别在600℃、900℃和1100℃三种不同温度下退火30分钟。采用零椭偏、傅里叶变换红外光谱(FTIR)、光致发光(PL)和原子力显微镜(AFM)对样品进行表征。结果表明:沉积的薄膜由化学计量硅向化学计量SiO2转变;光致发光性差。热处理后的平均粗糙度(Sa)在2 ~ 4 nm之间测定(TT)。

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Characterization and fabrication of SiOx nano-metric films, obtained by reactive sputtering

Nano-metric layers were obtained by reactive sputtering using different oxygen/argon (O/Ar) flow rates. Si and SiO targets were used to make SiOx films (x≤2) and these were annealed at three different temperatures, 600 °C, 900 °C and 1100 °C during 30 minutes, in N2 ambient. The samples were characterized by Null Ellipsometry, Fourier Transform Infra Red (FTIR) spectroscopy, Photoluminescence (PL) and Atomic Force Microscopy (AFM). Results show that the as deposited films are off stoichiometric silicon, which move towards stoichiometric SiO2 with annealing. Poor photoluminescence was found. Average roughness (Sa) was determined between 2 a 4 nm after thermal treatments (TT).

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来源期刊

2012 9th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)

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