将MoS2 NCFET缩放至83 nm, SSave/SSRef.=0.177，迟滞最小20 mV

2020 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2020-12-12 DOI:10.1109/IEDM13553.2020.9372092

Guanhua Yang, J. Niu, Congyan Lu, Rongrong Cao, Jiawei Wang, Ying Zhao, X. Chuai, Mengmeng Li, Di Geng, Nianduan Lu, Qi Liu, Ling Li, Ming Liu

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引用次数: 3

摘要

我们首次通过实验证明了MoS2负电容场效应晶体管(NCFET)可以从器件缩放中受益。在短通道器件(83 nm通道长度)中，超低亚阈值摆幅(SS)最小值为17.28 mV/dec，平均值为39 mV/dec，且无迟滞现象。MoS2 nfet相对于参考MoS2 FET的平均SS (SSave)改进因子，由SSave/SSRef量化。，在迄今报道的所有无迟滞2D ncfet中达到了历史最低值0.177。在VGS = 0 V和1.5 V时，IDS分别提高了364倍和26倍。

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Scaling MoS2 NCFET to 83 nm with Record-low Ratio of SSave/SSRef.=0.177 and Minimum 20 mV Hysteresis

For the first time, we experimentally prove that MoS2 negative-capacitance field-effect transistor (NCFET) can benefit from device scaling. In the short-channel device (83 nm channel length), ultra-low subthreshold swing (SS) of 17.28 mV/dec minimum and 39 mV/dec in average, is demonstrated without suffering from hysteresis. The average SS (SSave) improvement factor of MoS2 NCFET with respect to reference MoS2 FET, which is quantified by SSave/SSRef., reaches a record-low value of 0.177 among all hysteresis-free 2D NCFETs reported so far. Furthermore, 364 and 26 times improvements of IDS are achieved at VGS = 0 V and 1.5 V, respectively.

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2020 IEEE International Electron Devices Meeting (IEDM)

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