磁攻击和热攻击对stream性能的影响及低开销缓解技术

Jaedong Jang, Swaroop Ghosh
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引用次数: 9

摘要

在本文中,我们分析了自旋扭矩传输RAM在磁场和温度方面的基本漏洞,这些漏洞可以被意图触发软性能故障的对手利用。我们提出了新的攻击向量及其对内存性能的影响(即读,写和保留)。我们提出了一种新的低开销时钟频率自适应技术来减轻攻击。我们的分析表明,在300 Oe直流磁场下,将时钟频率降低85%可恢复170 mV的感测余量。此外,66%的工作时钟减速使stram能够承受超过300欧的交流磁场。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Performance Impact of Magnetic and Thermal Attack on STTRAM and Low-Overhead Mitigation Techniques
In this paper, we analyze the fundamental vulnerabilities of Spin-Torque-Transfer RAM on magnetic field and temperature that can be exploited by adversaries with an intent to trigger soft performance failures. We present novel attack vectors and their impact on memory performance (i.e., read, write and retention). We propose a novel low-overhead clock frequency-adaptation technique to mitigate the attack. Our analysis indicate slowing the clock frequency by 85% restores 170 mV of sense margin under 300 Oe DC magnetic field. In addition, 66% operating clock slowdown allows STTRAM to tolerate over 300 Oe AC magnetic field.
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