{"title":"从场效应管产生30db的AGC","authors":"B. Hallford","doi":"10.1109/MWSYM.1985.1132054","DOIUrl":null,"url":null,"abstract":"A low-noise single-gate GaAs MESFET has been successfully used to provide a 30-dB AGC range for low-noise amplifiers in down-converters used in microwave communication systems from 4 to 11 GHz. Threshold NF is not affected. With 30 dB of AGC, the FET amplifier NF is 18 dB.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"30 dB of AGC from an FET\",\"authors\":\"B. Hallford\",\"doi\":\"10.1109/MWSYM.1985.1132054\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low-noise single-gate GaAs MESFET has been successfully used to provide a 30-dB AGC range for low-noise amplifiers in down-converters used in microwave communication systems from 4 to 11 GHz. Threshold NF is not affected. With 30 dB of AGC, the FET amplifier NF is 18 dB.\",\"PeriodicalId\":446741,\"journal\":{\"name\":\"1985 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"72 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1985 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1985.1132054\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1985 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1985.1132054","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A low-noise single-gate GaAs MESFET has been successfully used to provide a 30-dB AGC range for low-noise amplifiers in down-converters used in microwave communication systems from 4 to 11 GHz. Threshold NF is not affected. With 30 dB of AGC, the FET amplifier NF is 18 dB.
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