在damascene等离子体处理过程中灰渣诱导的多孔致密SiCOH层间介电材料的改性

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-07 DOI:10.1109/IITC.2004.1345724

T. Dalton, N. Fuller, C. Tweedie, D. Dunn, C. Labelle, S. Gates, M. Colburn, S.T. Chen, T. Lai, R. Dellaguardia, K. Petrarca, C. Dziobkowski, K. Kumar, S. Siddiqui

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引用次数: 4

摘要

利用各种分析技术研究了光刻胶等离子体剥离过程中低k介电材料的改性。这些技术最初应用于毯状晶圆片，随后应用于特殊设计的测试结构和图案晶圆片上的产品结构。给出了实验结果并进行了分析。

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Ash-induced modification of porous and dense SiCOH inter-level-dielectric (ILD) materials during damascene plasma processing

Modification of low-k dielectric materials during photoresist plasma stripping was examined using a variety of analytical techniques. These techniques were initially applied to blanket wafers and were subsequently applied to both specially-designed test structures and product structures on patterned wafers. Results of these experiments are presented and analyzed.

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来源期刊

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

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